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Output Voltage(VO(on)) : 200mV
Input Resistor : 2.9kΩ
Resistor Ratio : -
Collector - Emitter Voltage VCEO : 50V
Description : Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 246mW Surface Mount SOT-23
Mfr. Part # : LMUN2231LT1G
Model Number : LMUN2231LT1G
Package : SOT-23
The LMUN2231LT1G and S-LMUN2231LT1G are NPN silicon surface mount transistors featuring integrated monolithic bias resistor networks. These devices simplify circuit design, reduce board space, and decrease component count. They are suitable for automotive and other applications requiring unique site and control change requirements, with the S- prefix models being AEC-Q101 qualified and PPAP capable. The transistors are compliant with RoHS requirements and Halogen Free.
| Model | Device Marking | R1 (K) | R2 (K) | Shipping | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) - Continuous | Total Device Dissipation (PD) | Thermal Resistance (RJA) | Junction & Storage Temperature (TJ, Tstg) | Input Voltage Range (Vin) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| LMUN2231LT1G | A8H | 2.2 | 2.2 | 3000/Tape&Reel | 50 V | 50 V | 100 mA | 1.5 W (@ TA = 25C on FR-5 Board) | 67 C/W (on FR-5 Board) | -55 ~ +150 C | -10 ~ +12 V |
| S-LMUN2231LT1G | A8H | 2.2 | 2.2 | 10000/Tape&Reel | 50 V | 50 V | 100 mA | 1.5 W (@ TA = 25C on FR-5 Board) | 67 C/W (on FR-5 Board) | -55 ~ +150 C | -10 ~ +12 V |
| LMUN2231LT3G | A8H | 2.2 | 2.2 | 10000/Tape&Reel | 50 V | 50 V | 100 mA | 1.5 W (@ TA = 25C on FR-5 Board) | 67 C/W (on FR-5 Board) | -55 ~ +150 C | -10 ~ +12 V |
| Characteristic | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| OFF CHARACTERISTICS | |||||
| Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) | VBR(CEO) | 50 | - | - | V |
| Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) | VBR(CBO) | 50 | - | - | V |
| Collector-Base Cutoff Current (VCB = 50 V, IE = 0) | ICBO | - | - | 100 | nA |
| Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) | ICEO | - | - | 500 | nA |
| Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) | IEBO | - | - | 100 | nA |
| ON CHARACTERISTICS (Note 2.) | |||||
| DC Current Gain (IC = 5.0 mA, VCE = 10 V) | HFE | - | - | 2.3 | - |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 5 mA) | VCE(sat) | - | - | 0.25 | V |
| Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL =1.0K) | VOL | - | - | 0.2 | V |
| Output Voltage (on) (VCC = 5.0 V, VB = 0.25 V, RL =1.0K) | VOH | - | - | 0.8 | V |
| Input Resistor | R1 | - | 2.2 | - | K |
| Resistor Ratio | R1/R2 | - | 1.0 | - | - |
| Dimension | Millimeters (Min) | Millimeters (Nom) | Millimeters (Max) | Inches (Min) | Inches (Nom) | Inches (Max) |
|---|---|---|---|---|---|---|
| A | 0.89 | 1.0 | 1.11 | 0.035 | 0.039 | 0.044 |
| A1 | 0.01 | 0.06 | 0.1 | 0.001 | 0.002 | 0.004 |
| b | 0.37 | 0.44 | 0.5 | 0.015 | 0.017 | 0.020 |
| c | 0.09 | 0.13 | 0.18 | 0.003 | 0.005 | 0.007 |
| D | 2.80 | 2.9 | 3.04 | 0.110 | 0.114 | 0.120 |
| E | 1.20 | 1.3 | 1.4 | 0.047 | 0.051 | 0.055 |
| e | 1.78 | 1.9 | 2.04 | 0.070 | 0.075 | 0.080 |
| HE | 2.10 | 2.4 | 2.64 | 0.083 | 0.094 | 0.104 |
| L | 0.10 | 0.2 | 0.3 | 0.004 | 0.008 | 0.012 |
| L1 | 0.35 | 0.54 | 0.69 | 0.014 | 0.021 | 0.027 |
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NPN silicon transistor LRC LMUN2231LT1G featuring monolithic resistor networks and compact design for space saving circuits Images |